2023.09～至今    南开大学 电子科学与技术 博士

2020.09～2023.06 重庆邮电大学 电子科学与技术 硕士

2016.09～2020.07 重庆邮电大学 微电子科学与工程 学士

1. Yiming Yuan, Yuchan Wang, Xiaosheng Tang, Nan Zhang, Wenxia Zhang, Enhanced Resistive Switching Performance through Air-Stable Cu2AgSbI6 Thin Films for Flexible and Multilevel Storage Application. ACS Applied Materials & Interfaces 2022, 14 (48), 53990-53998.

2. Yiming Yuan, Yuchan Wang, Wenxia Zhang, Fei Qi, Xiaosheng Tang, Zhen Wang, Dimer-type Cs3Sb2I9: An efficient perovskite material for low operating voltage and high stability flexible resistive switching memory. Journal of Alloys and Compounds 2023, 937, 168308.

3. Yuchan Wang, Yiming Yuan, Wenxia Zhang, Fei Qi, Nan Zhang, Ting Liu, Xiaosheng Tang, Flexible resistive switching device based on air-stable lead-free Cu3SbI6 perovskite film for nonvolatile memory application. Applied Physics Letters 2022, 120 (26), 263503.

4. Yuchan Wang, Yiming Yuan, Yuhan Wang, Suzhen Yuan, Xiaogang Chen, Failure Analysis and Performance Improvement of Phase Change Memory Based on Ge2Sb2Te5. IEEE Transactions on Device and Materials Reliability 2021, 21 (2), 236-239.

5. Yuchan Wang, Nannan Xu, Yiming Yuan, Wenxia Zhang, Qiang Huang, Xiaosheng Tang, Fei Qi, Achieving adjustable digital-to-analog conversion in memristors with embedded Cs2AgSbBr6 nanoparticles. Nanoscale 2023, 15 (16), 7344-7351.

6. Yuchan Wang, Nannan Xu, Wenxia Zhang, Yiming Yuan, Fei Qi, Nan Zhang, Xiaosheng Tang, Resistive Switching Behavior in Lead-Free Double Perovskite Cs2AgSbBr6 for Flexible Device Application. IEEE Transactions on Electron Devices 2022, 69 (12), 6676-6680.

 

专利：

1. 一种基于硫系化合物的浪涌保护阵列及制备方法（已授权）

2. 一种基于无铅铯锑碘钙钛矿阻变存储器及其制备方法（实质审查）